october 2008 ?2008 fairchild semiconductor corporation 1 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet unifet tm fdh50n50_f133 / fda50n50 500v n-channel mosfet features ? 48a, 500v, r ds(on) = 0.105 @v gs = 10 v ? low gate charge ( typical 105 nc) ?low c rss ( typical 45 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transis - tors are produced using fairchil d? s propr ietary, planar stripe, dmos technology. this advanced technology has be en especially t a ilored to mini - mize on-state resistance, prov ide supe rior switching perfor - mance, and withstand high energy pulse in the avalanche and commut ation mode. these devices are well suited for high effi - cient switched mode power suppl ie s and active power factor correction. { { { z z z { { { z z z s d g g s d to-247 fdh series gs d to-3p n fda series absolute maximum ratings symbol parameter fdh50n50_f133/fda50n50 unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 48 30.8 a a i dm drain current - pulsed (note 1) 192 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 1868 mj i ar avalanche current (note 1) 48 a e ar repetitive avalanche energy (note 1) 62.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) - derate above 25 c 625 5 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter min. max. unit r jc thermal resistance, junction-to-case -- 0.2 c/w r cs thermal resistance, case-to-sink 0.24 -- c/w r ja thermal resistance, junction-to-ambient -- 40 c/w
2 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdh50n50_f133 fdh50n50_f133 to-247 - - 30 fda50n50 fda50n50 to-3p n - - 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 500 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 25 250 a a i gssf gate-body leakage current, forward v gs = 20v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 24a -- 0.089 0.105 g fs forward transconductance v ds = 40v, i d = 48a (note 4) -- 20 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 4979 6460 pf c oss output capacitance -- 760 1000 pf c rss reverse transfer capacitance -- 50 65 pf c oss output capacitance v ds = 400v, v gs = 0v, f = 1.0mhz -- 161 -- pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 342 -- pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 48a r g = 25 (note 4, 5) -- 105 220 ns t r turn-on rise time -- 360 730 ns t d(off) turn-off delay time -- 225 460 ns t f turn-off fall time -- 230 470 ns q g total gate charge v ds = 400v, i d = 48a v gs = 10v (note 4, 5) -- 105 137 nc q gs gate-source charge -- 33 -- nc q gd gate-drain charge -- 45 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 48 a i sm maximum pulsed drain-source diode forward current -- -- 192 a v sd drain-source diode forward voltage v gs = 0v, i s = 48a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 48a di f /dt =100a/ s (note 4) -- 580 -- ns q rr reverse recovery charge -- 10 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1.46mh, i as = 48a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 48a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 4567891 0 0.1 1 10 100 notes : 1. v ds = 40v 2. 250 s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariati on vs. s ourc e current and temperatue 0 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 v gs = 20v v gs = 10v note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 0 40 80 120 160 25 o c 150 o c notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 2 0 2,000 4,000 6,000 8,000 10,000 12,000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 48a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation f igure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 24 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 10 us dc 10 ms 1 ms 100 us operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ o c] figure 11. typical drain current slope figure 12. typical drain-source voltage vs. gate resistance slope vs. gate resistance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c dv/dt(off) dv/dt(on) dv/dt [v/ns] r g , gate resistance [ ] 0 5 10 15 20 25 30 35 40 45 50 0 500 1,000 1,500 2,000 2,500 3,000 3,500 4,000 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c di/dt(off) di/dt(on) di/dt [a/ s] r g , gate resistance [ ]
5 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet typical performance characteristics (continued) figure 13. typical switching losses vs. figure 14. unclamped inductive switching gate resistance capability 0 5 10 15 20 25 30 35 40 45 50 0 200 400 600 800 1,000 notes : 1. v ds = 400 v 2. v gs = 12 v 3. i d = 25a 4. t j = 125 o c eoff eon energy [ j] r g , gate resistance [ ] 0.01 0.1 1 10 100 1 10 100 starting t j = 150 o c notes : 1. if r = 0 t av = (l)(i as )/(1.3 rated bv dss - v dd ) 2. if r 0 t av = (l/r)in[(i as x r)/(1.3 rated bv dss - v dd )+1] starting t j = 25 o c i as , avalanche current [a] t av , time in avalanche [ms] figure 15. transient thermal resistance curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 notes : 1. z jc (t) = 0.2 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec]
6 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet mechanical dimensions to-247ab dimensions in millimeters
7 www.fairchildsemi.com fdh50n50_f133 / fda50n50 rev. a fdh50n50_f133 / fda50n50 500v n-channel mosfet mechanical dimensions dimensions in millimet ers to- 3p n
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